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Additional resources for Analysis of the Stability of Astrophysical Objects and a New Mechanism for Freeing Their Energy
LANYON AND R. M. 5 FIG. 4. Capacitance vs. c. voltage for pure selenium at 1 kHz. 2 60 80 100 T - TEMPERATURE - *C 120 140 FIG. 5. Temperature dependence of series resistance in thallium-doped selenium. TRAPPING LEVELS IN HEXAGONAL SELENIUM 63 within 1 micron of the surface. These values were reproducible on both cleaved and etched surfaces. The electrode could be removed and the sample etched in Na2S without a drastic change in the measured acceptor concentration. This suggests that there is a maximum of 4 x 1014 such centres/cm3 in the bulk of the material.
1. Let Θ be the angle between H and the oaxis. For 77/6 < Θ < 77/2, the oscillations are periodic (Fig. 2), and the extremal areas of the Fermi surface for different values of Θ (Fig. 3) can be deduced. For 0<77-/6, it was not possible to analyze the experimental results with a single period structure (Fig. 2). Braun and Landwehr*1) obtained similar results. The position of the successive maxima and minima of magnetoresistance cannot be explained by spin splitting. Λ Binary axis Sample C axis FIG.
5 120 125 E ( meV) 130 - FIG. 1. Variation of absorption coefficient with photon energy at 4°K for samples with different hole concentrations. This structure disappeared by increasing the dopage or the temperature. At 20°K and 77°K, the absorption was broadened in the lower energy transition and the high energy peak became indistinguishable. 9 meV. 7 meV. Magnetoabsorption Preliminary results were obtained in the magnetoabsorption studies on the hole interband transition. At 4°K, in the presence of a magnetic field (H<20 kG) applied along the ternary axis, no effect was observed.
Analysis of the Stability of Astrophysical Objects and a New Mechanism for Freeing Their Energy